? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 2301 sot-23 w (sot-23 field effect transistors) p p p p -channel -channel -channel -channel enhancement-mode enhancement-mode enhancement-mode enhancement-mode mos mos mos mos fets fets fets fets p p p p ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? device device device device marking marking marking marking characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss -20 v gate - source voltage ? O - ? O? v gs + 10 v drain current (continuous) ? O - Bm i d -2.8 a drain current (pulsed) ? O - i dm -10 a total device dissipation ? t a = 25 h?? 25 p d 550 m w junct io n Y t j 150 storage temperature ? t stg -55to+15 0 gm gm gm gm 2321 = = = = a1 a1 2301
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm2 301 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t a =25 unless otherwise noted of?? 25 ) pulse width < 300 s; duty cycle < 2.0% characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = - 25 0 u a, v gs =0 v ) b v dss -2 0 v gate threshold voltage ? O _ ? ( i d = - 25 0 u a, v gs = v ds ) v g s ( th ) -0.5 -1.5 v diode forward voltage drop ? O ( i s = -0.75 a, v gs =0 v ) v sd - 1 . 5 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = -16v ) (v gs = 0 v, v ds = -16v , t a = 5 5 ) i dss - 1 -1 0 u a gate body leakage ? O ? (v gs = + 10 v, v ds = 0 v) i gss + 100 n a static drain-source on-state resistance ??? ? ( i d = -2.8 a, v gs = -4. 5v ) r ds ( on ) 100 m static drain-source on-state resistance ??? ? ( i d = -2 a, v gs = -2.5 v ) r ds ( on ) 120 m input capacitance ? (v gs = 0 v, v ds = -10 v, f=1 mhz) c iss 600 pf output capacitance ? (v gs = 0 v, v ds = -10 v, f=1 mhz) c oss 120 pf turn-on time rg (v ds = -10 v, i d = -2.8 a , r gen = 6 ) t (on) 8 ns turn-off time ? rg (v ds = -10 v, i d = -2.8 a , r gen = 6 ) t (off) 60 ns
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 2301 dimension dimension dimension dimension b?
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